The ammonia salt solutions can be enhanced by the addition of acids, chelators, oxidizers, and the like. At the preferred concentrations it is in solution. Local planarization refers to planarization over a small area, typically about 50 square microns, while global planarization refers to planarization over an entire chip or wafer. Numerous compounds can be used to modify the pH. The secondary oxidizer comprises potassium peroxymonosulfate, peroxymonosulfuiric acid, imidazole, malonic acid, or malonamide.

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Il magazzino di Germano Walter & C.

Of course, acids, other primary and secondary oxidizers, chelators, and pH control compounds are advantageously included. A method for chemical mechanical polishing of tungsten comprising: The polishing rate is very dependent on pH.

The formation of nitrogen even takes place through a slow internal redox reaction at pH values above 8. The following table delineates fourteen specific examples of slurry compositions in accordance with the present invention and further delineates composition concentrations mixing ratiossome comparison etch rate data between using a DI water for the balance of the slurry verses using abrasive B.

Applicants, however, have found that the hydroxylamine chemistries become more aggressive with increased pH values.

The process of claim 1 wherein the secondary oxidizer comprises hydrogen peroxide, a perborate, a a-0025a, or a urea hydrogen peroxide complex. Each abrasive has ideal pH ranges in which they perform best.


A composition for chemical mechanical polishing that includes a slurry is described. The secondary oxidizer may include potassium peroxymonosulfate, imidazole, malonic acid, potassium iodate, potassium periodate, lithium periodate, or malonamide, periodic acid, oxalic acid, or mixtures thereof.

Typically, the CMP process includes covering the surface of the wafer with the slurry and polishing the wafer. At pH 8, however, the lofitech rate was Angstroms per minute. This compares to about 75 Angstroms per minute without citric acid.

Germano Walter Magazzino

After 7 days, the pH was 7. The chemical mechanical polishing composition may include periodic acid, peracetic acid, oxalic acid, citric acid, lactic acid, NH4HF2, or a mixture thereof. For example, the conductive patterns of adjacent layers are electrically connected through an intervening dielectric insulating layer by a conductive interconnect or plug.

In contrast, and surprisingly, hydroxylamine-based chemistries do not seem to have this same relationship. The concentration of particles in the abrasive slurry may be widely varied in the broad practice of the present invention, depending on the specific application or results. The first approach uses a single phase slurry.

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Planarity during logitfch improves both dielectric and metal film coverage and increases lithography, etching and deposition process latitudes. A copper single-step slurry process involves only one phase slurry. As discussed above the pH can often be adjusted with buffering amounts of hydryoxylamine and salts thereof, and with acidic chelators, and with organic acids such as citric acid, and finally with inorganic acids.


With no KIO4, the pH was 7. The process of claim 9 wherein the chemical mechanical polishing composition comprises at least one of potassium iodate, potassium periodate, or lithium periodate. USB disconnect, address 3 [ You are not directly subscribed to this bug’s notifications.

Aug 15, Inventors: The Ubuntu Kernel Team is planning to move to the 2. See full activity log. The hydroxylamine sulfate solid of oxidizer E is preferably between about 0. The hydroxylamine sulfate solid of oxidizer G is preferably between about 0. Martin Pool mbp wrote on The process of claim logitedh further comprising a second polishing operation comprising the steps of:.

Hydroxylamine nitrate serves as a mild oxidizing agent having a pH of about 3 to about 3. Organic acids such as citric acid, succinic acid, tartaric acid, oxalic acid, malonic acid, and gluconic acid are preferred for selected embodiments.